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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2907A/D Amplifier Transistor PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2907A MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value -60 -60 -5.0 -600 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C 1 2 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = -3.0 Vdc) Collector Cutoff Current (VCE = -10 V) Base Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO -- -- IEBO ICEO IBEX -- -- -- -0.01 -10 -10 -10 -50 nAdc nAdc nAdc -60 -60 -5.0 -- -- -- -- -50 Vdc Vdc Vdc nAdc Adc v 300 ms, Duty Cycle v 2.0%. 1 Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 P2N2907A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc)(1) (IC = -500 mAdc, VCE = -10 Vdc)(1) Collector - Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) Base - Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) hFE 75 100 100 100 50 VCE(sat) -- -- VBE(sat) -- -- -1.3 -2.6 -0.4 -1.6 Vdc -- -- -- 300 -- Vdc -- SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product(1), (2) (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 -- -- -- 8.0 30 MHz pF pF SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc) (Figure 2) (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) (Figures 1 and 5) ton td tr toff ts tf -- -- -- -- -- -- 50 10 40 110 80 30 ns ns ns ns ns ns 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -16 V 200 ns 50 1.0 k INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -30 V 200 ns v v -30 V 200 +15 V -6.0 V 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1.0 k 1.0 k 50 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data P2N2907A TYPICAL CHARACTERISTICS 3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = -1.0 V VCE = -10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 -0.1 - 55C -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 -0.8 IC = -1.0 mA -0.6 -10 mA -100 mA -500 mA -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 Figure 4. Collector Saturation Region 300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT tr 500 VCC = -30 V IC/IB = 10 TJ = 25C t, TIME (ns) 300 200 tf 100 70 50 30 20 2.0 V -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 ts = ts - 1/8 tf VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C t, TIME (ns) -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Turn-Off Time Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 P2N2907A TYPICAL SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 10 f = 1.0 kHz NF, NOISE FIGURE (dB) 8.0 IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0 6.0 6.0 4.0 4.0 IC = -50 A -100 A -500 A -1.0 mA 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects 30 20 C, CAPACITANCE (pF) Ceb 400 300 200 10 7.0 5.0 3.0 2.0 -0.1 Ccb 100 80 60 40 30 20 -1.0 -2.0 VCE = -20 V TJ = 25C -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current-Gain -- Bandwidth Product -1.0 TJ = 25C -0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) VBE(on) @ VCE = -10 V +0.5 0 RqVC for VCE(sat) -0.5 -1.0 -1.5 -2.0 VCE(sat) @ IC/IB = 10 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 RqVB for VBE -0.6 -0.4 -0.2 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltage Figure 12. Temperature Coefficients 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data P2N2907A PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 P2N2907A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 P2N2907A/D Motorola Small-Signal Transistors, FETs and Diodes Device Data *P2N2907A/D* |
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